PJGBLC03C-R1 - Protection diodes - arrays

PJGBLC03C-R1
Description

Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1

Specifications
Manufacturer PanJit Semiconductor
Type of diode TVS array
Breakdown voltage 4.75...5.25V
Max. forward impulse current 1A
Peak pulse power dissipation 0.35kW
Semiconductor structure bidirectional
Mounting SMD
Case SOD323
Max. off-state voltage 3.3V
Leakage current 20µA
Number of channels 1
Kind of package reel
tape
Capacitance 3pF
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Development and design: Seventh Cat