PHB32N06LT.118 - SMD N channel transistors

PHB32N06LT.118
Description

Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 24A
Pulsed drain current 136A
Power dissipation 97W
Case D2PAK
SOT404
Gate-source voltage ±15V
On-state resistance 43mΩ
Mounting SMD
Gate charge 17nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat