PHB20N06T.118 - SMD N channel transistors

PHB20N06T.118
Description

Transistor: N-MOSFET; unipolar; 55V; 14.3A; Idm: 81A; 62W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 55V
Drain current 14.3A
Pulsed drain current 81A
Power dissipation 62W
Case D2PAK
SOT404
Gate-source voltage ±20V
On-state resistance 0.15Ω
Mounting SMD
Gate charge 11nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat