P82F7R5SN-5600 - THT N channel transistors

P82F7R5SN-5600
Description

Transistor: N-MOSFET; EETMOS3; unipolar; 75V; 82A; Idm: 328A; 58W

Specifications
Manufacturer SHINDENGEN
Type of transistor N-MOSFET
Technology EETMOS3
Polarisation unipolar
Drain-source voltage 75V
Drain current 82A
Pulsed drain current 328A
Power dissipation 58W
Case FTO-220AG (SC91)
Gate-source voltage ±20V
On-state resistance 3.8mΩ
Mounting THT
Gate charge 168nC
Kind of package bulk
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat