P4F90VX3-5600 - THT N channel transistors

P4F90VX3-5600
Description

Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 12A; 79W

Specifications
Manufacturer SHINDENGEN
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 900V
Drain current 4A
Pulsed drain current 12A
Power dissipation 79W
Case FTO-220AG (SC91)
Gate-source voltage ±30V
On-state resistance 3.4Ω
Mounting THT
Gate charge 21nC
Kind of package bulk
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat