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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / P4F60HP2-5600

P4F60HP2-5600 - THT N channel transistors

P4F60HP2-5600
Description

Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 4A; Idm: 16A

Specifications
Manufacturer SHINDENGEN
Type of transistor N-MOSFET
Technology Hi-PotMOS2
Polarisation unipolar
Drain-source voltage 600V
Drain current 4A
Pulsed drain current 16A
Power dissipation 62.5W
Case FTO-220AG (SC91)
Gate-source voltage ±30V
On-state resistance 1.8Ω
Mounting THT
Gate charge 12.5nC
Kind of package bulk
Kind of channel enhancement
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Development and design: Seventh Cat