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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / P30W60HP2V-5100

P30W60HP2V-5100 - THT N channel transistors

P30W60HP2V-5100
Description

Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 30A; Idm: 120A

Specifications
Manufacturer SHINDENGEN
Type of transistor N-MOSFET
Technology Hi-PotMOS2
Polarisation unipolar
Drain-source voltage 600V
Drain current 30A
Pulsed drain current 120A
Power dissipation 310W
Case MTO3PV (TO247AD)
Gate-source voltage ±30V
On-state resistance 0.23Ω
Mounting THT
Gate charge 70nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat