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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / P22F10SN-5600

P22F10SN-5600 - THT N channel transistors

P22F10SN-5600
Description

Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W

Specifications
Manufacturer SHINDENGEN
Type of transistor N-MOSFET
Technology EETMOS3
Polarisation unipolar
Drain-source voltage 100V
Drain current 22A
Pulsed drain current 66A
Power dissipation 35W
Case FTO-220AG (SC91)
Gate-source voltage ±20V
On-state resistance 28mΩ
Mounting THT
Gate charge 34nC
Kind of package bulk
Kind of channel enhancement
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Development and design: Seventh Cat