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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / P17F28HP2-5600

P17F28HP2-5600 - THT N channel transistors

P17F28HP2-5600
Description

Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 280V; 17A; Idm: 68A; 79W

Specifications
Manufacturer SHINDENGEN
Type of transistor N-MOSFET
Technology Hi-PotMOS2
Polarisation unipolar
Drain-source voltage 280V
Drain current 17A
Pulsed drain current 68A
Power dissipation 79W
Case FTO-220AG (SC91)
Gate-source voltage ±30V
On-state resistance 0.23Ω
Mounting THT
Gate charge 19.5nC
Kind of package bulk
Kind of channel enhancement
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Development and design: Seventh Cat