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Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
| Manufacturer |
SHINDENGEN |
| Type of transistor |
N-MOSFET |
| Technology |
Hi-PotMOS2 |
| Polarisation |
unipolar |
| Drain-source voltage |
600V |
| Drain current |
0.5A |
| Pulsed drain current |
2A |
| Power dissipation |
35W |
| Case |
FB (TO252AA) |
| Gate-source voltage |
±30V |
| On-state resistance |
10Ω |
| Mounting |
SMD |
| Gate charge |
4.3nC |
| Kind of package |
reel tape |
| Kind of channel |
enhancement |