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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / NXV65UPR

NXV65UPR - SMD P channel transistors

NXV65UPR
Description

Transistor: P-MOSFET; Trench; unipolar; -20V; -1.3A; Idm: -8.4A

Specifications
Manufacturer NEXPERIA
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -20V
Drain current -1.3A
Pulsed drain current -8.4A
Power dissipation 0.34W
Case SOT23
TO236AB
Gate-source voltage ±8V
On-state resistance 0.15Ω
Mounting SMD
Gate charge 5.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat