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Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW
| Manufacturer |
NEXPERIA |
| Type of transistor |
N-MOSFET x2 |
| Polarisation |
unipolar |
| Drain-source voltage |
30V |
| Drain current |
0.12A |
| Pulsed drain current |
0.8A |
| Power dissipation |
375mW |
| Case |
SOT666 |
| Gate-source voltage |
±20V |
| On-state resistance |
9.2Ω |
| Mounting |
SMD |
| Gate charge |
0.44nC |
| Kind of package |
reel tape |
| Kind of channel |
enhancement |