NX2301P.215 - SMD P channel transistors

NX2301P.215
Description

Transistor: P-MOSFET; unipolar; -20V; -2A; 400mW; SOT23,TO236AB

Specifications
Manufacturer NEXPERIA
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -2A
Power dissipation 0.4W
Case SOT23
TO236AB
Gate-source voltage ±8V
On-state resistance 0.27Ω
Mounting SMD
Gate charge 6nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat