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Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
| Manufacturer |
NEXPERIA |
| Type of transistor |
N-MOSFET |
| Technology |
Trench |
| Polarisation |
unipolar |
| Drain-source voltage |
60V |
| Drain current |
0.12A |
| Pulsed drain current |
0.765A |
| Power dissipation |
0.265W |
| Case |
SOT23 TO236AB |
| Gate-source voltage |
±20V |
| On-state resistance |
10Ω |
| Mounting |
SMD |
| Gate charge |
0.9nC |
| Kind of package |
reel tape |
| Kind of channel |
enhancement |