NX138AKVL - SMD N channel transistors

NX138AKVL
Description

Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.12A
Pulsed drain current 0.765A
Power dissipation 0.265W
Case SOT23
TO236AB
Gate-source voltage ±20V
On-state resistance 10Ω
Mounting SMD
Gate charge 0.9nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat