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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / NVMFS6H800NLT1G

NVMFS6H800NLT1G - SMD N channel transistors

NVMFS6H800NLT1G
Description

Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 80V
Drain current 224A
Pulsed drain current 900A
Power dissipation 107W
Case DFN5
Gate-source voltage ±20V
On-state resistance 1.9mΩ
Mounting SMD
Gate charge 112nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat