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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / NVMFS5C638NLT1G

NVMFS5C638NLT1G - SMD N channel transistors

NVMFS5C638NLT1G
Description

Transistor: N-MOSFET; unipolar; 60V; 133A; Idm: 811A; 50W; DFN5

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 133A
Pulsed drain current 811A
Power dissipation 50W
Case DFN5
Gate-source voltage ±20V
On-state resistance 3mΩ
Mounting SMD
Gate charge 40.7nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat