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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / NVGS5120PT1G

NVGS5120PT1G - SMD P channel transistors

NVGS5120PT1G
Description

Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.1W; TSOP6

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -2.9A
Pulsed drain current -20A
Power dissipation 1.1W
Case TSOP6
Gate-source voltage ±20V
On-state resistance 111mΩ
Mounting SMD
Gate charge 18.1nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat