NVF2955T1G - SMD P channel transistors

NVF2955T1G
Description

Transistor: P-MOSFET; unipolar; -60V; -2.6A; 2.3W; SOT223

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -2.6A
Power dissipation 2.3W
Case SOT223
Gate-source voltage ±20V
On-state resistance 154mΩ
Mounting SMD
Gate charge 14.3nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat