NVD5C688NLT4G - SMD N channel transistors

NVD5C688NLT4G
Description

Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 77A; 9W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 12A
Pulsed drain current 77A
Power dissipation 9W
Case DPAK
Gate-source voltage ±16V
On-state resistance 27.4mΩ
Mounting SMD
Gate charge 7nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat