NTZD5110NT1G - Multi channel transistors

NTZD5110NT1G
Description

Transistor: N-MOSFET x2; unipolar; 60V; 0.225A; 0.28W; SOT563F; ESD

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.225A
Power dissipation 0.28W
Case SOT563F
Gate-source voltage ±20V
On-state resistance 1.6Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat