NTZD3152PT1G - Multi channel transistors

NTZD3152PT1G
Description

Transistor: P-MOSFET x2; unipolar; -20V; -0.43A; 0.25W; SOT563

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET x2
Polarisation unipolar
Drain-source voltage -20V
Drain current -0.43A
Power dissipation 0.25W
Case SOT563
Gate-source voltage ±6V
On-state resistance
Mounting SMD
Gate charge 1.7nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat