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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / NTS4173PT1G

NTS4173PT1G - SMD P channel transistors

NTS4173PT1G
Description

Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -800mA
Pulsed drain current -5A
Power dissipation 0.29W
Case SC70
SOT323
Gate-source voltage ±12V
On-state resistance 0.15Ω
Mounting SMD
Gate charge 10.1nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat