NTS4101PT1G - SMD P channel transistors

NTS4101PT1G
Description

Transistor: P-MOSFET; unipolar; -20V; -0.62A; 0.329W; SC70,SOT323

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -0.62A
Power dissipation 0.329W
Case SC70
SOT323
Gate-source voltage ±8V
On-state resistance 0.16Ω
Mounting SMD
Gate charge 6.4nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat