NTR4101PT1G - SMD P channel transistors

NTR4101PT1G
Description

Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -1.7A
Power dissipation 0.21W
Case SOT23
Gate-source voltage ±8V
On-state resistance 0.21Ω
Mounting SMD
Gate charge 7.5nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat