NTR1P02LT1G - SMD P channel transistors

NTR1P02LT1G
Description

Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.4W; SOT23

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -1.3A
Power dissipation 0.4W
Case SOT23
Gate-source voltage ±12V
On-state resistance 0.22Ω
Mounting SMD
Gate charge 3.1nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat