NTP6412ANG - THT N channel transistors

NTP6412ANG
Description

Transistor: N-MOSFET; unipolar; 100V; 58A; Idm: 240A; 167W; TO220-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 58A
Pulsed drain current 240A
Power dissipation 167W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 18.2mΩ
Mounting THT
Gate charge 73nC
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat