NTP360N80S3Z - THT N channel transistors

NTP360N80S3Z
Description

Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 96W; TO220-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 800V
Drain current 13A
Pulsed drain current 32.5A
Power dissipation 96W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 0.36Ω
Mounting THT
Gate charge 25.3nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat