NTP067N65S3H - THT N channel transistors

NTP067N65S3H
Description

Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 40A
Pulsed drain current 112A
Power dissipation 266W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 67mΩ
Mounting THT
Gate charge 80nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat