NTJS4151PT1G - SMD P channel transistors

NTJS4151PT1G
Description

Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1W

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -2.4A
Power dissipation 1W
Case SC70-6
SC88
SOT363
Gate-source voltage ±12V
On-state resistance 60mΩ
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat