NTJD5121NT1G - Multi channel transistors

NTJD5121NT1G
Description

Transistor: N-MOSFET x2; unipolar; 60V; 0.295A; 0.25W; ESD

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.295A
Power dissipation 0.25W
Case SC70-6
SC88
SOT363
Gate-source voltage ±20V
On-state resistance 2.5Ω
Mounting SMD
Gate charge 0.9nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat