NTHL060N090SC1 - THT N channel transistors

NTHL060N090SC1
Description

Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 900V
Drain current 32A
Pulsed drain current 184A
Power dissipation 110W
Case TO247-3
Gate-source voltage -10...20V
On-state resistance 60mΩ
Mounting THT
Gate charge 87nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat