NTHL041N60S5H - THT N channel transistors

NTHL041N60S5H
Description

Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 36A
Pulsed drain current 200A
Power dissipation 329W
Case TO247
Gate-source voltage ±30V
On-state resistance 32.8mΩ
Mounting THT
Gate charge 108nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat