NTHD3100CT1G - Multi channel transistors

NTHD3100CT1G
Description

Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V

Specifications
Manufacturer ONSEMI
Type of transistor N/P-MOSFET
Polarisation unipolar
Kind of transistor complementary pair
Drain-source voltage 20/-20V
Drain current 3.9/-4.4A
Pulsed drain current 12A
Power dissipation 3.1W
Case ChipFET
Gate-source voltage ±12/±8V
On-state resistance 115/110mΩ
Mounting SMD
Gate charge 7.4nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat