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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / NTH4L080N120SC1

NTH4L080N120SC1 - THT N channel transistors

NTH4L080N120SC1
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 21A
Pulsed drain current 125A
Power dissipation 28W
Case TO247-4
Gate-source voltage -15...25V
On-state resistance 80mΩ
Mounting THT
Gate charge 56nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
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Development and design: Seventh Cat