NTE4153NT1G - SMD N channel transistors

NTE4153NT1G
Description

Transistor: N-MOSFET; unipolar; 20V; 0.66A; 0.3W; SC89

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 20V
Drain current 0.66A
Power dissipation 0.3W
Case SC89
Gate-source voltage ±6V
On-state resistance 0.23Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat