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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / NTE4151PT1G

NTE4151PT1G - SMD P channel transistors

NTE4151PT1G
Description

Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -0.76A
Power dissipation 313mW
Case SC89
Gate-source voltage ±6V
On-state resistance 1Ω
Mounting SMD
Gate charge 2.1nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat