NTE2967 - THT N channel transistors

NTE2967
Description

Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 150W; TO3P

Specifications
Manufacturer NTE Electronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 70A
Pulsed drain current 280A
Power dissipation 150W
Case TO3P
Gate-source voltage ±20V
On-state resistance 14mΩ
Mounting THT
Kind of channel enhancement
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Development and design: Seventh Cat