NTE2919 - THT P channel transistors

NTE2919
Description

Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 25W; TO220F

Specifications
Manufacturer NTE Electronics
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -20A
Pulsed drain current -80A
Power dissipation 25W
Case TO220F
Gate-source voltage ±20V
On-state resistance 92mΩ
Mounting THT
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat