NTE2914 - THT N channel transistors

NTE2914
Description

Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 25W; TO220F

Specifications
Manufacturer NTE Electronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 25A
Pulsed drain current 100A
Power dissipation 25W
Case TO220F
Gate-source voltage ±20V
On-state resistance 26mΩ
Mounting THT
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat