NTE2905 - THT P channel transistors

NTE2905
Description

Transistor: P-MOSFET; unipolar; -200V; -7.5A; Idm: -48A; 150W; TO247

Specifications
Manufacturer NTE Electronics
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -200V
Drain current -7.5A
Pulsed drain current -48A
Power dissipation 150W
Case TO247
Gate-source voltage ±20V
On-state resistance 0.5Ω
Mounting THT
Kind of channel enhancement
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Development and design: Seventh Cat