NTE2396A - THT N channel transistors

NTE2396A
Description

Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 110A; 130W; TO220

Specifications
Manufacturer NTE Electronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 23A
Pulsed drain current 110A
Power dissipation 130W
Case TO220
Gate-source voltage ±20V
On-state resistance 40mΩ
Mounting THT
Kind of channel enhancement
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Development and design: Seventh Cat