NTE2380 - THT N channel transistors

NTE2380
Description

Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 40W; TO220

Specifications
Manufacturer NTE Electronics
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 2.5A
Pulsed drain current 10A
Power dissipation 40W
Case TO220
Gate-source voltage ±20V
On-state resistance
Mounting THT
Kind of channel enhancement
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Development and design: Seventh Cat