NTD20P06LT4G - SMD P channel transistors

NTD20P06LT4G
Description

Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -15.5A
Power dissipation 65W
Case DPAK
Gate-source voltage ±20V
On-state resistance 0.13Ω
Mounting SMD
Gate charge 26nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat