NTD20N06T4G - SMD N channel transistors

NTD20N06T4G
Description

Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 10A
Pulsed drain current 60A
Power dissipation 60W
Case DPAK
Gate-source voltage ±20V
On-state resistance 37.5mΩ
Mounting SMD
Gate charge 21.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat