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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / NSF080120L3A0Q

NSF080120L3A0Q - THT N channel transistors

NSF080120L3A0Q
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 80A; 183W

Specifications
Manufacturer NEXPERIA
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 25A
Pulsed drain current 80A
Power dissipation 183W
Case TO247-3
Gate-source voltage -10...22V
On-state resistance 0.12Ω
Mounting THT
Gate charge 52nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat