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Home / Catalog / TME catalog / Semiconductors / Integrated circuits / Memories - integrated circuits / SRAM memories - integrated circuits / Parallel SRAM memories - integ. circ. / NLP51218B200TQLI

NLP51218B200TQLI - Parallel SRAM memories - integ. circ.

NLP51218B200TQLI
Description

IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel

Specifications
Manufacturer ISSI
Type of integrated circuit SRAM memory
Kind of memory SRAM
Memory 9Mb SRAM
Memory organisation 512kx18bit
Operating voltage 3.3V
Access time 3.1ns
Case QFP100
Kind of interface parallel
Mounting SMD
Operating temperature -40...85°C
Kind of package in-tray
tube
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