NGTB40N120FL3WG - THT IGBT transistors

NGTB40N120FL3WG
Description

Transistor: IGBT; 1.2kV; 40A; 227W; TO247-3

Specifications
Manufacturer ONSEMI
Type of transistor IGBT
Collector-emitter voltage 1.2kV
Collector current 40A
Power dissipation 227W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 160A
Mounting THT
Gate charge 212nC
Kind of package tube
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat