NGTB35N65FL2WG - THT IGBT transistors

NGTB35N65FL2WG
Description

Transistor: IGBT; 650V; 35A; 150W; TO247-3

Specifications
Manufacturer ONSEMI
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 35A
Power dissipation 150W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 120A
Mounting THT
Gate charge 125nC
Kind of package tube
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Development and design: Seventh Cat