NCP81080DR2G - MOSFET/IGBT drivers

NCP81080DR2G
Description

IC: driver; MOSFET half-bridge; high-side,gate driver; SO8

Specifications
Manufacturer ONSEMI
Type of integrated circuit driver
Topology MOSFET half-bridge
Kind of integrated circuit gate driver
high-side
Case SO8
Output current -800...500mA
Supply voltage 5.5...20V DC
Mounting SMD
Operating temperature -40...140°C
Impulse rise time 19ns
Pulse fall time 17ns
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Development and design: Seventh Cat