NCP5181DR2G - MOSFET/IGBT drivers

NCP5181DR2G
Description

IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A

Specifications
Manufacturer ONSEMI
Type of integrated circuit driver
Topology IGBT half-bridge
MOSFET half-bridge
Kind of integrated circuit gate driver
high-/low-side
Case SO8
Output current -2.2...1.4A
Number of channels 2
Supply voltage 10...20V DC
Mounting SMD
Operating temperature -40...125°C
Impulse rise time 60ns
Pulse fall time 40ns
Kind of package reel
tape
Voltage class 600V
Protection undervoltage UVP
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Development and design: Seventh Cat