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IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
| Manufacturer |
ONSEMI |
| Type of integrated circuit |
driver |
| Topology |
IGBT half-bridge MOSFET half-bridge |
| Kind of integrated circuit |
gate driver high-/low-side |
| Case |
SO8 |
| Output current |
-2.2...1.4A |
| Number of channels |
2 |
| Supply voltage |
10...20V DC |
| Mounting |
SMD |
| Operating temperature |
-40...125°C |
| Impulse rise time |
60ns |
| Pulse fall time |
40ns |
| Kind of package |
reel tape |
| Voltage class |
600V |
| Protection |
undervoltage UVP |